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Home > Products > Diode Transistor > SIR422DP-T1-GE3 IC Chips Integrated Circuits IC Transistor MOSFET SO-8

SIR422DP-T1-GE3 IC Chips Integrated Circuits IC Transistor MOSFET SO-8

Category:
Diode Transistor
Payment Method:
L/C, T/T, Western Union, MoneyGram,Panply
Specifications
Model Number:
SIR422DP-T1-GE3
Describetion/Pack:
MOSFET 40V Vds 20V Vgs PowerPAK SO-8
Remarks:
For Materials That Are Not Available On The Website, Please Email Us Directly For A Quote
Shipping By:
China Post/DHL/FEDEX/UPS/TNT/DPEX/KAS
Description:
BOM List Quotation
Lead Time:
1-3 Working Days
ROHS:
Yes
Warranty:
360days
Type:
Intergrated Circuit
Type-:
IC
Introduction

SIR422DP-T1-GE3 IC Chips Integrated Circuits IC Transistor MOSFET SO-8
 
                                                               PRODUCT DESCRIPTION
 
Part number # SIR422DP-T1-GE3 is manufactured by Vishay Technologies and distributed by Jalixin. As one of the leading distributors of electronic products, we carry many electronic components from the world's top manufacturers.
For more information on
SIR422DP-T1-GE3 detailed specifications, quotations, lead times, payment terms and more, please do not hesitate to contact us. In order to process your enquiry, please add the quantity SIR422DP-T1-GE3 to your message. Send an email to andy@szjialixin.com for a quote now.
 
                                                                         PRODUCT PROPERTIES
 

Manufacturer:Vishay
Product Category:MOSFET
Technology:Si
Mounting Style:SMD/SMT
Package / Case:PowerPAK-SO-8
Transistor Polarity:N-Channel
Number of Channels:1 Channel
Vds - Drain-Source Breakdown Voltage:40 V
Id - Continuous Drain Current:20.5 A
Rds On - Drain-Source Resistance:6.6 mOhms
Vgs - Gate-Source Voltage:- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:1.2 V
Qg - Gate Charge:48 nC
Minimum Operating Temperature:- 55 C
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:34.7 W
Channel Mode:Enhancement
Tradename:TrenchFET, PowerPAK
Packaging:Reel
Packaging:Cut Tape
Packaging:MouseReel
Brand:Vishay Semiconductors
Configuration:Single
Fall Time:11 ns
Forward Transconductance - Min:70 S
Product Type:MOSFET
Rise Time:84 ns
Series:SIR
Subcategory:MOSFETs
Typical Turn-Off Delay Time:28 ns
Typical Turn-On Delay Time:19 ns
Part # Aliases:SIR422DP-GE3
Unit Weight:0.017870 oz

 
SIR422DP-T1-GE3 IC Chips Integrated Circuits IC Transistor MOSFET SO-8
 
SIR422DP-T1-GE3 IC Chips Integrated Circuits IC Transistor MOSFET SO-8
 
 
FAQ
 
1. who are we?
JIALIXIN was stablished at 2010, there's 12 years experience to supply electronics components, including 10 years experience to offer BOM Kitting service.

2. how can we guarantee quality?
Our company has a special QC department, and we have a professional testing machine to test. We will take pictures of you and send documents to customers before shipment. Our goods are all agency or original source, and will be checked before shipment.

3.Do you provide the BOM listing service?
YES sure,please just contact us and send us your BOM,we will check the best price for you.JIALIXIN 10 years experience to offer BOM Kitting service.

4. why should you buy from us not from other suppliers?
1) Spot advantage, we have warehouses, which can meet the needs of urgently needed materials.
2) Agency advantage, we cooperate with authorized agents. For some long-term demanded materials, send us the target price for application, and we can negotiate with the agent to arrange orders.

 
 
 
 
 

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Stock:
MOQ:
1pcs